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The Ar flow was maintained at 15 sccm during the entire deposition process.
In the experimental approach, the entire deposition process was physically separated into the anodic and the cathodic reactions by preparing two cells connected by a salt bridge.
During the entire deposition process, FFT-IS is performed, i.e. every 2 s, a spectrum of 26 frequencies from 75 Hz to 18.5 kHz is applied simultaneously and the corresponding impedance data is recorded as well as the deposition voltage.
The in-situ temperature measurement indicated that the temperature at the intertwining interface did not exceed the recrystallization temperature of nickel during the entire deposition process, suggesting that the nickel particles at the intertwining interface were in solid state rather than thermally softened viscous state.
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This allows splitting the entire Co deposition process into two sections.
Unlike the Rp, the associated process time constant τp remains constant over the entire deposition time.
In order to compare the efficiency levels of each deposition process, the particle density δ was normalized by the number of nanoparticles initially present in the entire liquid volume in the cell.
The deposition process was optimized.
The deposition process was summarized as follows.
arc deposition process.
The Si3N4 deposition process was processed in STS PECVD.
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