Figure 3b, c, d, e shows the μ-PL spectra at 4.0 K of the In0.8Ga0.2As SAQDs ensemble grown on SiO2-patterned 5°-off (001) GaAs substrates with W 001) of 0, 60, 110, and 150 nm, respectively.
Figure 3 (a) The μ-PL spectrum of In 0.8 Ga 0.2 As SAQDs grown on unpatterned 5°-off (001) GaAs substrates and μ-PL spectra at 4.0 K of the In 0.8 Ga 0.2 As SAQDs ensemble grown on SiO 2 -patterned 5°-off (001) GaAs substrates with W (001) of (b) 0, (c) 60, (d) 110, and (e) 150 nm, respectively.
Figure 4a, b, c, d shows that μ-PL spectra of an In0.8Ga0.2As SAQDs ensemble grown on SiO2-patterned 5°-off (001) GaAs substrate with the excitation power of He-Ne laser were 0.4, 2, 3.17, and 4 meV, respectively, when W 001) was maintained as the constant value of 150 nm.
Figure 2 μ-PL spectra at 4.0 K of the In 0.8 Ga 0.2 As SAQDs ensemble grown on SiO 2 -patterned exact (001) GaAs substrates with W (001) of (a) 20, (b) 40, (c) 70, (d) 100, and (e) 140 nm, respectively.
Figure 4 μ-PL spectra of an In 0.8 Ga 0.2 As SAQDs ensemble grown on SiO 2 -patterned 5°-off (001) GaAs substrate with the excitation power of He-Ne laser were (a) 0.4, (b) 2, (c) 3.17, and (d) 4 meV, respectively.
This effect allows stable bunching effect of multi-atomic step on (001), and SAQDs selectively formed on step edge with definite interval as shown in Figure 1d. Figure 2a, b, c, d, e shows the μ-PL spectra at 4.0 K of the In0.8Ga0.2As SAQDs ensemble grown on SiO2-patterned exact (001) GaAs substrates with W 001) of 20, 40, 70, and 100, and 140 nm, respectively.
A typical FESEM image of V2O5 NW ensembles grown as described above on silicon substrate prepared by PVD is shown in Figure 1a.
Thus the notion that the tape recorder could function as one instrument in an ensemble grew more and more popular.
In the finale a complex ensemble grows ever more complex, until six male-female couples are moving in independent ways at the same time.
