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We find that the as-grown β-Ga2O3 NWs exhibit state filling following carrier excitation for probing wavelengths between 340 to 450 nm corresponding to states lying energetically below the conduction band edge.
We find that the as-grown β-Ga2O3 NWs exhibit state filling following carrier excitation at 266 nm (λ E) for probing wavelengths (λ p) between 340 to 450 nm corresponding to states lying energetically below but near the conduction band edge.
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