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Reliability characteristics of ac/dc cycling endurance, data retention, and read durability were measured.
To investigate the reliability characteristics of the memory devices, dc/ac cycling endurance, data retention, and read durability were measured.
Good memory reliability characteristics of switching endurance, data retention, flexibility, and mechanical endurance were promising for future memory applications.
Cyclic torsion and cyclic tension compression endurance data of 2024-T351 are compared using Mises equivalent stresses.
Three uni-axial fatigue series with stress gradients were used to determine surface endurance data for the Findley criterion.
The first one was based on Wöhler's fatigue experiments and involved engineering curve fits of the fatigue endurance data.
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Figure 9 Read endurance and data retention characteristics.
Figure 9 AC endurance and data retention characteristics.
Figure 12 The typical read endurance and data retention characteristic for the device with Ti nanolayer.
The switching endurance and data retention characteristics of the device unit of Pt/Al2O3/HfO2/Al2O3/TiN/Si have been examined.
Moreover, good program/erase disturb immunity, cycling endurance and data retention are demonstrated.
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