Your English writing platform
Discover LudwigExact(10)
d Endurance characteristic of the memory devices programmed/erased at 8/−8 V at room temperature.
(b) Endurance characteristic of the memory up to 104 program/erase cycles.
Figure 5 Endurance characteristic of the Zr/CeO x /Pt device during DC sweeping modes up to 10 4 cycles.
This resistance switching feature can be used as the multilevel memory, and the endurance characteristic indicates that the device becomes negligibly degraded.
The memory endurance characteristic is studied by plotting the V t shift vs. the number of program/erase cycles at 8/−8 V as depicted in Fig. 2d.
The endurance characteristic to 104 cycles operation for Gd2O3-NC memories with nanostructure (DL_1 (2 nm)) and single (SiO2) tunneling layer.
Similar(50)
Figure 14 Endurance characteristics.
(a) Endurance characteristics of the control sample.
Figure 4 Read pulse endurance characteristics.
Figure 4 Resistance voltage and endurance characteristics.
(a) DC endurance characteristics for 1,000 cycles.
Write better and faster with AI suggestions while staying true to your unique style.
Since I tried Ludwig back in 2017, I have been constantly using it in both editing and translation. Ever since, I suggest it to my translators at ProSciEditing.

Justyna Jupowicz-Kozak
CEO of Professional Science Editing for Scientists @ prosciediting.com