Non-volatile resistive memories, such as phase-change RAM (PRAM) and spin transfer torque RAM (STT-RAM), have emerged as promising candidates because of their fast read access, high storage density, and very low standby power.
There is a prospect that among the emerging memory technologies, MRAM, STT-RAM, and RRAM are the most promising ones, but they are still many years away from competing for industry adoption [84].
Spin-transfer torque random access memory (STT-RAM) is an emerging storage technology that is considered widely thanks to its attractive features such as low power consumption, nonvolatility, scalability and high density.
The two most attractive memory technologies that have emerged are phase-change RAM (PRAM)[3, 4] and spin transfer torque RAM (STT-RAM)[5 7].
"We expect to have M-RAM on the shelf by 2004 if everything goes well," said Dr. Bijan Davari, an I.B.M. fellow and vice president for technology and emerging products, who will oversee how M-RAM is adapted to the marketplace.
Currently, there are several technologies that show some promise; some of these new emerging technologies are MRAM, FeRAM, PCM, STT-RAM, nano-random-access memory (NRAM), racetrack memory, RRAM and memristor, molecular memory, and many others [10, 83].
In this article, we advocate the use of circuit parameter tuning and ECC to improve the reliability of emerging memory technologies such as MLC-PRAM and STT-RAM.
There is a view that MRAM, STT-RAM, and RRAM are the most promising emerging technologies, but they are still many years away from competing for industry adoption [23].
The plant is being converted from production of 64-megabit D-RAM memory chips to 256-megabit chips that are emerging as the industry standard.
The controversial theory that a sperm whale's head has a battering ram function emerged in the 19th century following a specific incident.
