Electronic cloaking has been recently suggested to design invisible dopants with electronic scattering cross sections smaller than 1% of the physical cross section (πa2).
A larger interface carrier density corresponds to a stronger interface electronic scattering, which can reduce macroscopic conductivity of the sample.
The T γ (E) and T E) probabilities are very important for the electronic scattering processes since they correspond directly to the experimentally measurable observables.
Second and third shell features at ~3.0 and 3.5 Å were successfully fit with either Cr or Fe because of similar photo electronic scattering properties of these elements.
Ripples act as an additional source of scattering hence it becomes an important theoretical question to address the nature of electronic scattering of such ripples while considering spin relaxation lengths.
In the present work, we investigate the electronic scattering processes on the basis of phase field matching theory (PFMT) [53, 54], originally developed for the scattering of phonons and magnons in nanostructures [55 59].
