Sentence examples for electronic mobility from inspiring English sources

Fig. 6 a The contour of the reduction in the barrier height in the unit of eV caused by the energy relaxation time and channel electric field due to the energy relaxation of electrons when the electronic mobility is 20,000 cm2 V−1 s−1, b an enlarge figure of the reduction in the barrier height range around 1 kV/cm and 1 ps.

Cloaking layers could be designed to coat nanoparticle dopants to minimally scatter conduction electrons and to enhance the electronic mobility.

Its energy-band structure and physical properties are similar to those of TiO2, but it has higher electronic mobility which is favorable for electron transport.

Among various applications, the use of ZnO nanomaterials as photoelectrodes for the fabrication of dye-sensitized solar cells (DSSCs) has received a great attention due to its compatibility and higher electronic mobility with TiO2 nanomaterials and similar electron affinity and band gap (3.37 eV at 298 K) [17].

ZnO is a wide-band gap semiconductor that possesses an energy band structure and physical properties similar to those of TiO2 but has higher electronic mobility that would be favorable for fast electron transport, with reduced recombination loss when used in DSSCs.

The concept of strain engineering is already being successfully employed in the semiconductor industry for electronics, for example, in electronic conducting transistors utilizing strained silicon to enhance the electronic mobility and in heteroepitaxy for monolithic integration of new materials onto Si wafers.

The electronic mobility-testing device provided reproducible data related for the bone-implant complex [11].

Crestal bone levels that were coincident with the top of the fixture or coronal to it were given the value 0. An electronic mobility-testing device (Periotest; Siemens AG, Bensheim, Germany) was used for the measurements in accordance with the manufacturer's recommendations on the final follow-up date after final prosthesis removal.

Charge transport in solids comprising such all-inorganic NCs is greatly improved and high (for NC solids) electronic mobilities of 5 35 cm V 1 s–1 are now routinely obtained.

However, not all the functionalization with halogen substituents would induce the increase of the electronic coupling and electron mobility.

In general, oxide semiconductors containing heavy metal cations with (n − 1) d10 ns0 (n ≥ 4) electronic configurations show high electron mobility as the ns0 orbitals are overlapped with each other.