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Silicon nitride (Si3N4) is a material of great technological interest in a number of applications, such as high-temperature electronics, because of its chemical inertness, high dielectric constant, large electronic gap, high resistance against radiation, and strong resistance against thermal shock[37].
In particular, the temperature dependence of PL spectrum intensity has been used to obtain information about electronic gap levels in semiconductors.
The aim of this work is to establish a correlation between the electronic properties of the semiconductors (electronic gap) and their reactivity (activation energy of the recombination reaction).
Fluorographane C2FH is therefore a material with the widest electronic gap and a largest binding energy of exciton in the class of currently known 2D materials.
The reported surface effect on the light absorption in Ge QDs should be kept into account for both the electronic gap calculations and for any application in photovoltaic devices.
In particular, the quasiparticle structure is a key for the calculation of the electronic gap and to the understanding of charge transport as the inclusion of excitonic effects is really important for a description of the optical properties.
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Indeed the second step consists in carrying out GW calculations which give the correct QP electronic gaps.
This shift points out that time period of voltage application can affect the subband electronic gaps in the anodic oxide layer.
By considering the self-energy of electrons, electronic band gap and the optical band gap are both described well comparing with the experimental results, which is crucial for prediction the performance of DUV crystals in the DUV region.
The analysis of its partial electron density of state reveals that the Nitrogen 2pz electrons and Indium 5s electrons are critical in forming this electronic band gap.
In addition to intrinsic optical concentration and angle restriction, nanophotonics can also be used to suppress absorption near a material's electronic band gap to create an effective photonic band gap that is higher in energy.
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