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Research areas in the Bao Group include synthesis of functional organic and polymer materials, organic electronic device design and fabrication, and applications development for organic electronics.
Creating systems that can be placed directly on a surface such as human skin has required new approaches in electronic device design and materials, a field known as stretchable electronics.
Selective epitaxial growth (SEG) of silicon opens new avenues in electronic device design by allowing vertical (three dimensional) integrated circuits to be fabricated and isolation between devices to be vastly improved.
Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design.
The physics details of the band alignment at TiO2/ML-MoS2 interface will provide a guide for the MoS2 based electronic device design.
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In the article, the Sony designer discussed Sony portable electronic device designs that lacked excessive ornamentation such as buttons, fit in the hand, were square with a screen and had corners [which] have been rounded out.
The best example is new research on the migratory patterns of the Arctic tern, using a minute electronic device designed by engineers at the British Antarctic Survey.
The CDF collaboration is building SVT: a specialized electronic device designed to perform real time track reconstruction using the Silicon VerteX detector (SVX II).
The vibrometer is controlled by an electronic device designed to facilitate the fully automated testing process with consistent repeatability and reliability which are essential to the non-destructive test.
Critical temperature threshold (CTT), defined as the highest temperature that produces a positive wheal response 11, was determined using a Temp Test® 3.0, a Peltier effect-based electronic device designed specifically for diagnosing and monitoring CCU symptoms 9.
The development of diamond-based electronic devices designed to operate at high power is strongly hampered by the lack of low dislocation single crystal material.
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