Sentence examples for electron level in from inspiring English sources

The most important parameter is the height of the free electron level in the bulk of the solution.

The relationship of s vs V does not vary appreciably when the barrier height, nature of the metal and the free electron level in solution have been changed.

The energy of the unoccupied electron level in the ground state of the reacting complex in the rate-determining step is −4.72 eV and is pH independent in the acid region.

Let us assume that the shift of the energy level E x in the artificial atom X (relative to the energy level Esc in the Sc atom) will be the same as the shift of the energy level ERb in the Rb atom (relative to the energy level Esc in the Sc atom), (i.e., Δ E x Sc = Δ E Sc Rb. Then, the valence electron level in the artificial atom will be E x  = −593 meV.

The sketch of electron levels in QDs films were shown in the Figure 7. Figure 7 The sketch of electron levels in QDs film.

According to Table 2 and the photoresponse curves from Fig. 9, a crystallite size of around 12.4 nm is necessary for building enough electron levels in both the conduction band as well as the valence band that favor the photogeneration of electron hole pairs (e −-h +) and the transport of electrical charge.

Based on Green's function technique, the conductance of the directly parallel coupled double quantum dot system is calculated (see Figure 10), one can see details discussion in Appendix 3. Figure 10 Conductance curves of directly parallel coupled double quantum dot system with various electron levels in quantum dots.

Based on the study of crystal size growth as a function of pressure and temperature and on photoresponse measurements, it was found that a crystallite size of around 12.4 nm is necessary for building enough electron levels in both the conduction band as well as valence band that favor both the photogeneration of electron hole pairs (e −-h +) as well as the transport of electrical charge.

These lines are related to the 1e 1h transition, where 1e means the first electron level confined in the InAs layers and 1h the first hole level confined in the GaIn(As Sb layer.

The analytical Fano factor agrees well with that obtained by numerical fitting, and the absolute value of the Fano factor q 1 increases with the increase of electron energy level in quantum dots.

It is inferred that radiative recombination rate for LED B is stronger than that for LED A thanks to the proposed superlattice p-EBL, which even more favors the hole injection into the MQW region and suppresses the electron leakage level in the meantime.