Sentence examples for electron depletion from inspiring English sources

It should be pointed out that electron depletion is observed at the aluminum vacancy sites in Figure 4. Observation of such an electron depleted region is expected because a stoichiometric γ-Al2O3 structure itself is an electrically neutral solid material, and inclusion of an ionized aluminum vacancy (e.g., V Al ' ' ' point defects) makes the electric charges unbalanced.

The presence of many depleted nanoscale ZFO crystallites, the rugged surface of the heterostructures, and electron depletion at the ZnO/ZFO interface might contribute to the enhanced acetone gas-sensing response.

The Co3O4/Ta2O5 hollow nanospheres also exhibited outstanding selectively and reliable stability, which can be attributed to the formation of the heterojunction in the contact surface of Co3O4 and Ta2O5, leading to the extension of electron depletion layer.

Whether the sparsely assembled flower-like SnO2 hierarchical nanosheets or the closely assembled counterparts, the thickness of an individual nanosheet is about 50 nm, which is less than twice Debye length of bulk SnO2 at 250 °C, resulting in full electron depletion induced by oxygen adsorption.

It is notable that the NiO sensors exhibit excellent gas sensing performances owing to the open and well-defined structure as well as abundant micro reaction rooms built by two-dimensional ultrathin nanosheets, which are thinner than the thickness of electron depletion layer.

This results in reducing the surface electron depletion region and causing improved photoconductivity [66].

Significant electron depletions (more than an order of magnitude) were measured in a narrow altitude region during both flights.

These electron depletions do not appear to be artifacts produced by electrode collisions with large positive particulates.

Particularly important is the simultaneous observation of charged aerosols, electron depletions, and small-scale electric field irregularities in the PMSE generation region.

Then, the improved properties could contribute to a more rapid increase in the number of free electrons, narrow the electronic depletion layer, and enhance the deoxidation reaction on the surface.

Thus, the chemoresistive variations of undoped p-type oxide semiconductors are lower than those induced at the electron-depletion layers of n-type oxide semiconductors.