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pulse duration for intense electron beam ionization (ms).
Note that the electron beam ionization of the sample surface takes place in situ during the investigations.
Some samples of thin-layer systems "organic adsorption layer on the layer of native oxide (2 nm) on iron film (200 nm) deposited on dielectric substrate (mica)" (Fig. 3a) were investigated immediately after intense pulse electron beam ionization in one vacuum chamber [2] with the aim of inducing ML and its properties investigation.
The region of Auger spectra which presents the electron-induced complex of MLs for active surface zone (Fig. 3) in the case of thin-layer system with KSt inceptive adsorption layer: (1) before, (2) immediately, (3) through t ml = 5.4 min, and (4) t ml = 10.2 min after pulse (τ = 8 ms) intense electron beam ionization.
The region of Auger spectra which presents the electron-induced complex of MLs for active surface zone (Fig. 3) in the case of a thin-layer system with isopropanol inceptive adsorption layer: (1) before, (2) immediately, (3) through t ml = 5.4 min, and (4) t ml = 10.2 min after pulse (τ = 8 ms) intense electron beam ionization.
From a numerical comparison for relative values, a character of dynamical decreasing for the difference in a dichroism value between saturated and current states of samples after a launch of a He-Ne laser intense pumping, as measured precisely by Hertogen et al. [29], is analogue to dynamical displacement of the MLs after intense electron beam ionization (Fig. 15a).
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NRL has developed a number of hollow cathodes to generate sheets of electrons culminating in a 'Large Area Plasma Processing System' (LAPPS) based on the electron-beam ionization process.
Fig. 2 Processes of new surface producing in folds and grain boundaries at electron beam mild ionization.
a The scheme of a thin-layer composite system "inceptive adsorption layer 4 on the native oxide layer 3 (2 nm) on the metal film 2 (200 nm) on dielectric substrate 1" and its defocused electron beam pulse ionization with active surface zone 5 after intense impact.
The high-energy electron beam can cause ionization of the sample and direct knock-on events (displacement damage).
Ions were generated by a 70eVV electron beam at an ionization current of 2.0 mA, and 30 spectra s-1 were recorded in the mass range 50 to 800 m/z.
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