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Dispensing with the additives previously used to hold such films together improved their electrical properties, including the ability to carry and store a large amount of charge.
We identify the graphene/HfO2 formation by Raman, X-ray photoelectron spectroscopy (XPS), Low energy electron diffraction (LEED), Low energy electron microscopy (LEEM) and electrical properties including Hall mobility and leakage current measurement.
With its microstructure being successfully tailored at the nanoscale, the CBNO-BIT film exhibits good electrical properties, including a large dielectric constant (εr ∼390), a high piezoelectric coefficient (d33 ∼90 pm/V) as well as a high energy storage density (WE ∼76 J/cm3).
Consequently, the silica@graphite incorporated composites were found to have a superior effect on thermal and electrical properties including conductivity, dissipation, stability, and resistivity than boron nitride or alumina filled composites with the conservation of the electrical insulating property above 1010 Ω·sq−1 for a filler loading of 0 30 vol%.
The electrical properties including application in FETs of SnO2 nanowires were also studied.
The electrical properties, including capacitance-voltage (C-V), conductance-voltage (G-V), and leakage current density-voltage (J-V) characteristics, were measured using an Agilent B1500A analyzer.
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Electrical properties include dielectric constant, dissipation factor, volume resistivity, and dielectric strength.
Besides conductivity, important electrical properties include dielectric strength (resistance to breakdown at high voltages) and dielectric loss (a measure of the energy dissipated as heat when an alternating current is applied).
Electrical and photoelectrical properties (including both the stationary photoresponse and the photocarriers' relaxation dynamics) of nanocrystalline semiconducting bismuth III) sulfide thin films were investigated.
Because of carbon-carbon covalent bonds, a graphene sheet exhibits extraordinary electrical and mechanical properties, including high intrinsic mobility (15,000~20,000 cm2/Vs) [7], a stretchable nature, and high thermal conductivity (approximately 5,300 W/mK) [8].
The interest in ZnO nanomaterials has been largely driven by the material's excellent electrical and optoelectronic properties, including direct wide band-gap (3.37 eV), high exciton binding energy (60 meV), and moderate to high electron mobility (1 to 200 cm2/Vs) [1, 4].
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