Dispensing with the additives previously used to hold such films together improved their electrical properties, including the ability to carry and store a large amount of charge.
We identify the graphene/HfO2 formation by Raman, X-ray photoelectron spectroscopy (XPS), Low energy electron diffraction (LEED), Low energy electron microscopy (LEEM) and electrical properties including Hall mobility and leakage current measurement.
With its microstructure being successfully tailored at the nanoscale, the CBNO-BIT film exhibits good electrical properties, including a large dielectric constant (εr ∼390), a high piezoelectric coefficient (d33 ∼90 pm/V) as well as a high energy storage density (WE ∼76 J/cm3).
Consequently, the silica@graphite incorporated composites were found to have a superior effect on thermal and electrical properties including conductivity, dissipation, stability, and resistivity than boron nitride or alumina filled composites with the conservation of the electrical insulating property above 1010 Ω·sq−1 for a filler loading of 0 30 vol%.
The electrical properties including application in FETs of SnO2 nanowires were also studied.
The electrical properties, including capacitance-voltage (C-V), conductance-voltage (G-V), and leakage current density-voltage (J-V) characteristics, were measured using an Agilent B1500A analyzer.
CNTs have also been embedded into polymers to fabricate composites with good electrical properties, including dielectric constants with higher values and good thermal stability [2].
Carbon nanotubes (CNTs) have intrinsically large surface areas (700 1000 m2 g−1), chemical stability, and excellent mechanical and electrical properties, including an extremely high conductance and aspect ratio [1].
Several characterization techniques were employed to identify the mechanisms behind the improvements in the electrical properties, including SEM and FTIR spectrum analysis.
