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Figure 5: Electrical field distribution at the interface calculated using the FDTD method.
We introduced 30-nm point light source at the 10 nm from the substrate and observed the electrical field distribution around the substrate.
The geometry parameter of a dual-sensor probe is firstly optimized through examining its electrical field distribution and sensitivity.
In order to obtain a homogeneous electrical field distribution along cavity, vane cutbacks are introduced and output endplate is modified.
The band diagram, electrical field distribution and current voltage (I V) characteristics up to punch-through voltage have been simulated.
Figure 5 shows the electrical field distribution at the interface of dielectric film and the metal substrate, where the same effective medium approximation model as that used in Figs 3 and S4 was utilized for the FDTD calculation.
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The in-depth analysis of physical mechanism is illustrated by using simulated surface current and electrical field distributions.
Electrical field distributions indicate that the coupling and interaction between internal surface plasmon polariton (internal SPP) and localized surface plasmon (LSP) modes between silver layer and SU-8 layer leads to the broad pass-band.
In this paper the possible application of ion beam induced charge (IBIC -microscopy for the analysIBIC -microscopyical forld disthebutions within the depletion regions of high-power devices is discussed.
Based on the 2-D Poisson's solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias.
Figure 1(b) and 1(c), respectively, plot the magnified views of the electrical field distributions E r (r-component of the electrical field) and E z at the neighbouring area of the rotational axis and z = 0 plane.
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