Interestingly, with increasing alignment electrical conductivity of the fibers is lost.
The interfacial, electrical, and band alignment characteristics of ALD HfO2 films on n-type Ge substrates have been investigated carefully.
However their fabrication requires precision machining, very good electrical contact and alignment between two joining mechanical parts.
The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated.
It was concluded that SWNT concentration and dispersion are the key variables for improving electrical conductivity, while alignment plays a secondary role.
Upon curing, the epoxy nanocomposites containing the aligned Fe3O4@CNFs show (i) greatly improved electrical conductivity in the alignment direction and (ii) significantly higher fracture toughness when the Fe3O4@CNFs are aligned normal to the crack surface, compared to the nanocomposites containing randomly-oriented Fe3O4@CNFs.
The nanofilm creates a flexible support for cell contraction and the aligned PIEZO microfibers deposited on top of the nanofilm creates conditions for cell alignment and electrical stimulation of the seeded cells.
We have investigated the interfacial, electrical properties, and band alignment of HfO2/SiO2/Ge MOS.
A simple two column sheathless CE/MS interface was constructed using polydimethylsiloxane to fabricate a microdevice allowing facile column alignment and electrical connection.
Furthermore, the influence of various parameters (i.e., cross-sectional area of tunnel current, height of barrier, alignment of CNTs, electrical conductivity, and nanofiller electrical conductivity) are systematically investigated [12].
