On the other hand, the bending stress representing the stress memory is independent of either the loading cycles or the specimens, as shown in the shaded area in Fig. 3. Fig. 3. Schematic illustration of the strain difference function.
However, in our selective attention task, the same stimuli were used for both target and distractors (both were visually presented letters); thus, the effects of either of the load manipulations that we employed cannot be due to a selective effect on either target or distractor processing (cf. Kim et al., 2005; Park et al., 2007).
It has been observed that the absolute average error associated with maximum true plastic strain calculation in all the three materials is always more than 5% and sometimes as high as 42.1% if the elastic region is removed either from the load–stroke curve or engineering stress strain curve to get the true stress plastic strain curve.
The observed positive association, in a susceptible group of the general population, between plasma oxidized LDL levels and either the carbon load of airway macrophages or the proximity of the subject's residence to busy roads suggests a proatherogenic effect of traffic air pollution.
It should be emphasized that the fuel consumption curve developed with either the full-load or the part-load tests can only be used for the case which has the same working condition and load as the tests; otherwise, the profile of tests can only be used as a rough reference.
Finally, fragility curves are derived which allow underlining the influence of several parameters related either to the loading or the RC member.
Either way, the loading of a metabolite on PC1 was interpreted to reflect the correlation between the change of 13C intensities in the metabolite and ecdysis or its associated behaviors.
Under quasistatic condition, the CNTFs were cyclically loaded and unloaded while electric field was applied along the length of carbon nanotube (CNT) either throughout the loading cycle or explicitly during either the loading or the unloading segment.
The absence of any discontinuities along either the loading or unloading segment is in sharp contrast to those observed in GaN thin films [21, 22] and in single-crystal Si [23, 24], indicating that neither twinning nor pressure-induced phase transformation is involved here.
