Sentence examples for effects of the gate from inspiring English sources

In addition, effects of the gate electrode work function of the LDDS-HMG-CNTFET have been studied theoretically.

Besides the effects of the gate barrier height increase (∼0.32 eV) and gate leakage current decrease (2 4 orders) with the time of oxidation, the shift of both threshold voltage (∼1 V) and peak of transconductance (∼2 V) of the C-HEMT device towards the zero gate voltage has been introduced.

For a better mechanistic understanding of these adaptive and contextual effects on the gating of these pathways, future extensions of the multi-pathway model may aim at incorporating how these pathway weights are determined by the stimulus context.

The effects of the gating schemes from 4D-CT for AC applied on PETMF effectiveness are being further investigated in our ongoing study.

The potential increased supply of timber from these concessions would likely, therefore, not have had a price-dampening effect on the gate price of timber (as calculated below).

Also, some of the effects of this gate current in the performance of digital, analog and RF circuits is discussed, and it is shown how new effects and considerations will come into play when designing circuits that use MOSFETs with ultra-thin oxides.

In Figure 6a, we can recognize the effect of the gate on channel in a DG structure which is more effective than SG due to the asymmetry of SG.

In summary, the discrepancy between the variation of the activation energy and the trap density in response to the gate voltage is due to the effect of the gate voltage-dependent number of shallow trap states, and the similar gate voltage dependency of the T0 and trap density indicates that the more trap density, the more active VRH is.

Effect of the gate bias on energy band delineates the modulation of 2DEG carriers in the shallow energy quantum well from 1.6×10−3 cm−3 to 9.47×1017 cm−3 with gate bias from 0.5 V to 1.0 V to confirm the drain current conduction with Vth>+0.5 V at typical depth of source and drain Ohmic contacts.

It was found that the vacuum channel radius should be no less than 20 nm, otherwise, severe performance degradation will appear due to the effect of the gate shield (leading to reduction of the anode current) and electron collision events with the dielectric layer (presenting reliability issues).

The late onset R420H mutation produces a severe dominant negative effect with associated loss of current amplitude, but has little effect on the gating properties of the remaining heteromeric channels.