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Therefore, with square resistance increasing, PN junction field-effect passivation decays and effective minority carrier lifetime decreases.
Table 1 summarizes the effect of this treatment process on the effective minority carrier lifetime (τeff).
Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated.
In this case after capping with Al2O3 films, the reduction of average D it and the increase of negative charges weaken the trap effect of defects and reduce the interface recombination to improve the effective minority carrier lifetime.
Figure 4 Effective minority carrier lifetime variation.
Post-etch treatment increases the effective minority carrier lifetime.
Beyond this Cr concentration, the effective minority carrier lifetime decreases.
The notable enhancement of the effective minority carrier lifetime for a Cr doping of 2 at.
After annealing, effective minority carrier lifetime increased to about 100 μs.
Figure 5 Effective minority carrier lifetime varies on different Al diffusion concentrations.
Fig. 5 Effective minority carrier lifetimes at an injection level of 1014 cm−3.
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