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These conductive complex salts were strongly suggested as potential candidates for the basic material to construct an effective capacitor.
The important requirement that needs to be fulfilled for an effective capacitor is fast energy uptake and release [1, 2].
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Low-k materials are prized because they make effective capacitors for semiconductor devices.
We measured the complex impedance of the capacitors versus bias and extracted the effective capacitance vs. voltage (C V) curves using two methods.
The insets show the optical micrograph of a parallel capacitor and an underlap gate TFT, where the effective capacitance areas are indicated.
Based on the network density extracted from AFM and SEM images and measurements of the effective dielectric constant of the hybrid layer we obtain effective capacitance values between 66 and 84 nF·cm–2, which are substantially lower than values derived from the standard plate plate capacitor model (0.110 and 0.145 μF·cm 2).
The induced charge n spreads over an area, A eff, which can be thought as the tip-graphene-insulator-semiconductor capacitor effective area (as schematically illustrated in the insert of Figure 2c).
Measured capacitance vs. effective area for parallel capacitors (a) and carbon nanotube TFTs with underlapped gate electrodes (b).
By nesting a zero-tracking compensation loop inside of the negative feedback loop comprising an error amplifier, the independence of off-chip capacitor and effective series resistance (ESR) is ensured for different load currents and operating voltages.
Two most important contributions to the electric response of the compact layer at a metal electrolyte solution interface, namely the reorientation of the molecular dipoles and the interfacial capacitor's effective gap relaxation, are considered in the unified "elastically bonded molecular capacitor" model.
For instance, in the range of (0, f s/3), X eq yields a higher resonance frequency f r′ because of the effective value of filter capacitor is decreased; conversely, in the range of (f s/3, f s/2), X eq yields a lower f r′.
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