Sentence examples for effect of the gate from inspiring English sources

In Figure 6a, we can recognize the effect of the gate on channel in a DG structure which is more effective than SG due to the asymmetry of SG.

In summary, the discrepancy between the variation of the activation energy and the trap density in response to the gate voltage is due to the effect of the gate voltage-dependent number of shallow trap states, and the similar gate voltage dependency of the T0 and trap density indicates that the more trap density, the more active VRH is.

Effect of the gate bias on energy band delineates the modulation of 2DEG carriers in the shallow energy quantum well from 1.6×10−3 cm−3 to 9.47×1017 cm−3 with gate bias from 0.5 V to 1.0 V to confirm the drain current conduction with Vth>+0.5 V at typical depth of source and drain Ohmic contacts.

It was found that the vacuum channel radius should be no less than 20 nm, otherwise, severe performance degradation will appear due to the effect of the gate shield (leading to reduction of the anode current) and electron collision events with the dielectric layer (presenting reliability issues).

The potential increased supply of timber from these concessions would likely, therefore, not have had a price-dampening effect on the gate price of timber (as calculated below).

This study investigates the effect of the Gate-to-Source/Drain overlap structure of a GaN Schottky Source/Drain MOSFET.

For this paper, LTPS TFTs were fabricated, and the SiNx/SiO2 gate dielectrics and the effect of the gate-overlap lightly doped drain (GOLDD) were analyzed in order to minimize these undesired effects.

In addition, effects of the gate electrode work function of the LDDS-HMG-CNTFET have been studied theoretically.

Besides the effects of the gate barrier height increase (∼0.32 eV) and gate leakage current decrease (2 4 orders) with the time of oxidation, the shift of both threshold voltage (∼1 V) and peak of transconductance (∼2 V) of the C-HEMT device towards the zero gate voltage has been introduced.

The effect of changing the gating system, the position, and size of feeders, and even the casting design could be simulated.

The effect of the polysilicon gate etch is investigated using a frame-gate architecture in which the polysilicon gate overlaps the side of the pillar, thereby protecting the channel from etch damage.