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The electrical properties were measured by Hall Effect Measurement System using the van der Pauw configuration with 0.32 T magnetic field at room temperature.
The concentration and mobility of carriers were measured by Hall Effect measurement system at room temperature (via van der Pauw technique) [14].
Measures used for effect measurement are described below.
Table 4 presents an overview of constructs, measures used for effect measurement and their occasion of administration.
Their electrical properties were measured by a Hall effect measurement system (Accent HL5500, York, England).
The electrical properties of the samples were measured using a Hall Effect Measurement System HMS-30000, EcopiAnyangang, South Korea) at room temperature.
The carrier density and mobility for the pristine SCNT film and doping film were measured with a Hall effect measurement system (Bio-Rad Corp. Hercules, CA, USA).
The electrical properties of the films were measured by using a Hall effect measurement system.
The surface current voltage (I-V) behaviors of the 1, 3, and 5 min graphene films were measured by means of Hall effect measurement, as shown in Figure 5a,b,c.
Hall effect measurement is the most popular technique in measuring the electrical properties of ZnO thin films.
Results of both cost and effect measurement will be integrated using cost-effectiveness and cost-utility analyses.
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