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We then measured MT at each spacer.
If each spacer uses SiO2 or HfO2, there will be eight combinations of spacer engineering at all.
This paper systematically analyzes the influences of spacer dielectric (low-k or high-k dielectrics) in each spacer on DGTFET DRAM and proposes an optimized spacer engineering.
Each spacer is selected for its affinity to retain a relatively stable thermal conductivity within a low- and high-temperature range.
Assuming the scaling law above [Eq. (3)], this fractal is self-similar only if the height of each spacer varies with n as 2−n.
Water accumulation was measured in each spacer by calculating the differences between pretest (dry) weights and posttest (wet) weights through the use of an analytical balance.
The peak shear stress and velocity fluctuation are repeated after each spacer cylinder, while the eddies are generally found before and after each cylinder.
Each spacer was tested for Reynolds numbers between 200 and 900 in the hot channel, while maintaining a constant temperature difference of 13 °C between the hot and the cold channels.
Introduction of benzene structure in the spacer favors π π stacking between pyrene moieties on the end of each spacer, which encourages direct exposure of the fluorophore residues to aqueous phase, and thus the film is able to quickly monitor NACs.
PCR primers were designed for each spacer using the Primer3 software program (INFOBIOGEN, Evry, France).
For each spacer, three types of genetic events were observed, i.e. variation in the number of tandem repeats, deletions and point mutations.
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