Sentence examples similar to e-characteristics from inspiring English sources

The i-E characteristics of ME/Cu-ZSM-5 presented the faradic process associated to redox couple Cu2+/Cu+ with a ΔE = 0.064 V/SCE.

The J-E characteristics in the conductor are given as a function of temperature, magnetic field and the field angle based on percolation transition model, and its potential as a high-field magnet coil is discussed based on a finite element method analysis.

Figure 4 shows typical leakage current density electric field (J-E) characteristics of the investigated samples.

Figure 6 Comparison of J - E characteristics of Al/Y 2 O 3 /IL/GaN-based MOS capacitors.

This band alignment shift would influence the leakage current density-electrical field (J-E) characteristics of the samples (Figure 6).

The ohmic conduction can be expressed as [19] Figure 9 Temperature-dependent J-E characteristics and electrical conductivity in LRS.

Figure 9 shows the field-emission current (J) versus applied electric field (E) characteristics of thin-walled open-ended aligned N-doped CNTs grown at different temperatures.

A correlation on the bandgap of Y2O3 gate and band alignment of Y2O3/GaN with regard to the J-E characteristics is also discussed in this paper.

The dependent R xx-E characteristics are symmetric due to the chirality of graphene electrons when an applied electric field changes from E to −E.

The F N plots show linear behavior, which is similar to many other reports [40, 41]. Figure 9 Field-emission current (J) versus applied electric field (E) characteristics of thin-walled open-ended aligned N-doped CNTs grown at three different temperatures and the inset is the corresponding Fowler Nordheim plots of different samples.

The acquired J value in this study is ~10-8A/cm2 ~10-8A/cm2 MV/cm, which is lower that thE other studies [4, 5, 14]. Figure 4 J-E characteristics of the investigated Al/ZrO 2 /IL/Si MOS capacitors.