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Courtin et al. [50] reported that the E g of FTO was approximately 2.2 eV.
ZnS is a wide band gap semiconductor with band gap energy (E g) of 3.68 eV.
The band gaps (E g) of TM-doped black (blue) phosphorenes are also given.
The semiconductor band-gap energy E g of the sample was investigated using Fourier Transform Infrared Spectroscopy (FTIR).
The E g of bulk PbS is only 0.41 eV, but is directly dependent on the size of nanoparticles.
Estimated values of optical energy gap E g of ZnO thin films are shown in Table 1.
Similar(19)
Any possible status of the transcriptome (e. g. of one of our samples) occupies a particular position in it.
In most cases, the biologist provides some good idea of similarity among the values, e. g. of similarity among certain tumor types.
b These included surveys prior to implementation (e. g. of managers at Fraser Health in BC [ 94], and of front-line health worker e. g. [ 95]).
More importantly, reluctant national recommendations, e. g. of disease management programmes, may play a major role [ 11].
Indium nitride (InN) is currently receiving much attention, in large part due to its recently observed narrow band gap E. g of 0.7 0.9 eV [1 3].
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