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Figure 5b shows the E g mode of Ti200, Ti450, Ti700, and Ti950, respectively.
Low intense E g mode at 144 cm−1 is also present in Ti950.
Three phonon processes contribute to the broadening of the E g mode [46].
The E g mode of each sample is Lorentzian fitted with a correctness of r 2 = 0.9985.
The E g mode at 383 cm-1 is an intralayer vibrational mode involving motion of Mo+S atoms in the basal plane.
The characteristic Raman-active phonons of the underlying TiO2 substrate can be readily identified in comparison with the bare TiO2 electrode, the most intense being the low frequency anatase E g mode at approximately 142 cm-1[3], together with the resonantly excited longitudinal optical (LO) phonon of CdS QDs at approximately 300 cm-1[20].
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The peaks at 141, 194, and 634 cm−1 are assigned to the E g modes, while the other two peaks at 512 and 395 cm−1 are assigned to the B 1g modes in TiO2 [34].
The spectrum of a single nanowire grown at 480°C is shown in Figure 3a and exhibits four peaks that were assigned to the three modes of BST - note that the E g 2 mode is split for certain stoichiometries.
The position of the A 1 g 2 and the higher E g 2 mode was weighted stronger than the position of the relatively constant A 1 g 1 mode and the lower E g 2 mode.
Data points of the higher A 1 g 2 and the E g 2 mode were fitted with a spline interpolation.
The high-frequency E g 2 mode is broadened as in the original data of Richter and Becker [cf. their Figure five(a)].
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