Yang et al. [46] explained the above fact that the memristive devices act as dynamic resistors which change their state according to the time integral of the applied current or voltage; they failed to give a relationship describing a dynamic state variable.
A switching control strategy is proposed to coordinate series-dynamic-resistor, dc-link chopper and crowbar [14].
In order to reduce noise and improve resolution of the detector, design and processing was optimized for low leakage currents, high dynamic resistance of biasing resistors, reduced strip pitch and wafer thickness.
Compared with a series dynamic braking resistor (SDBR), two aspects are improved.
Besides, a DC resistive superconducting fault current limiter (SFCL), bridge-type fault current limiter (BFCL) and series dynamic braking resistor (SDBR) are also considered to compare their performance with the proposed NSFCL.
The performance of the proposed NC-NBFCL is compared with the series dynamic braking resistor (SDBR) and static var compensator (SVC) in order to show the effectiveness of the proposed NC-NBFCL in terms of transient stability enhancement of DFIG based WF.
As such, it can be widely used in capacitors, positive temperature coefficient resistors, dynamic random access memories, electromechanics, and nonlinear optics [2, 3].
Nevertheless, Iandelli et al monitored the cephalic border of the area of apposition (ie, border between RC,p and RC,a) with ultrasound during exercise and demonstrated stability in this zone after inducing dynamic hyperinflation using a Starling resistor.
In this work, we report the resistor design of a dynamic hydrogen electrode (DHE) for VRFBs which enables the in-situ monitoring of the positive and negative electrode potential.
In this way the system reacted by braking continuously to maintain the dynamic balance, dissipating surplus energy in the resistor, indicating the relative torque and hence generated power.
