Sentence examples for dynamic capacitor from inspiring English sources

These properites were revealed by measurements of the Volta-potential difference by means of the Kelvin dynamic capacitor method at the α-CDP film coated electrode, emersed under potentiostatic polarization from the electrochemical cell containing 1 mM 4-nitrophenol solutions of different KC1 concentrations at different pH.

For inventing the 1-transistor/1-capacitor dynamic random access memory that significantly reduced the cost of memory, and for contributing to the development of the metal oxide semiconductor scaling principle that guides the design of increasingly small and complex integrated circuits.

Open image in new window Fig. 8 Dynamic response of series capacitor voltage (K p2 = 0.005).

The dynamic responses of the capacitor voltages in both Case 1 and Cass 2 under different compensation level are shown in Fig. 8.

With the shrink of device geometry, the 1 transistor (1T 1 capacitor (1C) dynamic random access memory (DRAM) has encountered difficulty in scaling down, because it is difficult for capacitor to reduce its size [1 3].

Open image in new window Fig. 11 Dynamic response of series capacitor voltage Open image in new window Fig. 12 Network resonance mode under different compensation level for Case 2 with increased wind farm scale.

Open image in new window Fig. 9 Dynamic response of series capacitor (K p2 = 0.0025/0.001) Open image in new window Fig. 10 Network resonance mode under different compensation level with various control parameters.

Fabrication of nanoscale structures and devices such as nanoimprint lithography templates, dynamic random-access memory capacitors, zone plates (X-ray lenses), etc. requires a high-aspect-ratio (AR) and high-resolution patterning capability.

Moreover, the high dielectric constant (k ~ 80) of TiO2 allows it to take the place of traditional silicon dioxide (SiO2), used as capacitors in dynamic random access memory (DRAM) devices or ultrathin gate dielectric layers in field-effect transistors (FET) [9, 10].

Essential issues in the engineering of storage capacitor parameters for dynamic memories based on Ti-doped Ta2O5, Hf-doped Ta2O5 and mixed HfO2 Ta2O5 layers are presented.

The eigenvalues of the network mode [3] and the dynamic response of the series capacitor voltage after the fault can demonstrate the subsychronous frequency oscillation of the network (i.e. IGE).