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Unlike in the conventional ISFET, the ISFGFET has a dual gate structure, a sensing gate and a control gate.
The distance between the dual gate is 0.5 μm. Figure 7 depicts the Id-Vg curves for different operation modes.
The bias stress effect in dual gate OFETs was also studied, and it was shown that the use of dual-gate can result in stable characteristics with small variations in threshold voltage.
The degradation in the on/off current ratio of bottom-gate OFETs was larger as compared to top-gate and dual gate OFETs.
So far there have been attempts to achieve this target by using a level shifter 12, 13 or a dual gate structure.
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The dual-gate model for pentameric ligand-gated ion channels activation and desensitization.
Myny, K. et al. Unipolar organic transistor circuits made robust by dual-gate technology.
Both gates of the dual-gate transistors were electrically connected for the VGS sweeps.
Importantly, we first verified that all these benefits of full depletion, which were found in conventional dual-gate silicon transistors, are also observed in printed complementary organic dual-gate transistors on a flexible substrate.
The dual-gate configuration yielded several advantages that helped overcome the chronic problems of conventional single-gate organic transistors.
In addition, the dual-gate transistors had higher gm values than single-gate transistors in both complementary OSCs.
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