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We emphasize that control experiments with h-BN that was transferred to SiO2, i.e., removed from the Cu catalyst, did not lead to such a drastic disintegration during annealing in air up to 700 °C.
It is important to note that annealing of h-BN films transferred to a 300 nm SiO2 /Si wafer support in air up to 700 °C did not lead to such a drastic disintegration consistent with recent reports.
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While negligible changes in both the soil structure and θ were observed following slow wetting, fast wetting resulted in disintegration of aggregates and drastic changes in the shape of the θ curve.
The stability of h-BN following this air exposure is strongly dependent on the catalyst interaction and accumulated oxygen dose, where high oxygen levels lead to drastic catalytically mediated h-BN etching and h-BN disintegration on Cu upon processing at elevated temperatures.
Unless some drastic action is quickly taken, there is a real risk of disintegration.
Moral disintegration!
How drastic?
But so has disintegration.
The Soviet Union's disintegration.
In bloody disintegration perhaps.
Drastic concessions.
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CEO of Professional Science Editing for Scientists @ prosciediting.com