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V DSsat is the saturation drain–source voltage.
The drain–source voltage was kept constant at 0 and -20 V, respectively.
The oxide thickness is 100 nm and the drain–source separation gap is 200 nm.
In this voltage, the dependence of output current on drain–source voltage reduces.
Conventional photolithography with a mercury lamp was applied to define the drain, source, gate, and contact pads for DC measurements.
The value of ΔV is increased up to ∼116 V at the drain source voltage of 2 V with great stability.
Similar(41)
The drain-source current(Ids)–drain-source voltage Vds) characteristics showed pinch-off and saturation.
The IDS is the drain-source current.
Inset shows drain-source current vs. drain-source bias under varying back gate voltages.
Figure 3 Output characteristics of drain-source current.
The drain-source current decreased with increasing gate voltage.
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