Sentence examples similar to drain overlap from inspiring English sources

The drain-to-bulk breakdown is starting in the (Drain -(Gate) overlap region and proceed until it reaches the drain contact where the current streamlines are more dense as shown in Figure 11(b).

One effective way to address the issues is to minimize the gate-to-drain parasitic overlap and fringing field capacitances.

Furthermore, we achieve one more bit at the same cell by utilizing a GIDL current controlled by FN tunneling in the source and drain region overlapped by the gate.

In the staggered geometries (BC/TG and TC/BG), the charges are injected not only from the edge of the electrode but also from the surface of the contacts in the region where the source-drain electrodes overlap with the gate electrode and consequently charges are injected over a larger area leading to a lower contact resistance than in the coplanar (BC/BG) geometry [26].

In this paper, a novel step gate-overlapped lightly doped drain (GOLDD) with raised source/drain (RSD) structure (SGORSD) is proposed for TFT electronic device application.

For this paper, LTPS TFTs were fabricated, and the SiNx/SiO2 gate dielectrics and the effect of the gate-overlap lightly doped drain (GOLDD) were analyzed in order to minimize these undesired effects.

Nanoscale drain and source gold electrodes, partly overlapping the previously fabricated connecting electrodes, are then fabricated by e-beam lithography (EBL), gold deposition and lift-off.

Figure 8a, b respectively shows the variations of transfer characteristics and on-state drain current with the length of gate-pocket overlap (L ov).

A third resist spinning and EBL step is applied to open gate electrode windows, which overlap slightly with the source and drain electrodes to cover the entire channel regions.

It is found that gate overlapping-on-drain suppresses the ambipolar behavior and improves OFF-state current.

In this paper, we have investigated the effect of gate overlapping-on-drain on the ambipolar behavior and high frequency performance of tunnel CNTFET (T-CNTFET).