Sentence examples for drain extension from inspiring English sources

Similarly, drain extension also induces the electron plasma at the drain side.

A large negative magnitude of normal electric field also exists at the drain to drain extension and the source to source extension as shown in Figure 12.

In devices with asymmetrical source/drain extension regions, simulations demonstrate that the threshold voltage controllability is improved when the drain extension region length is increased.

The voltage difference leads to an inverted channel as an electrical drain extension under the side gate.

In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance.

With implant energies for source drain extension (SDE) reaching sub keV levels, these implants are typically performed in decel mode.

The active As distributions obtained through the kinetic Monte Carlo simulation are introduced into the source and drain extensions of n-type gate-all-around NW transistors.

Simplified device instances with linearly varying fin width are simulated to better assess the impact of local thinning/thickening in the channel, source and drain extensions.

In this work, we have analyzed the effect of symmetric and asymmetric source drain extensions in the underlap DG FETs for improved subthreshold analog and RF performance in the 45 nm gate length regime.

However, the high series resistance associated to the source and drain extensions can arise as a serious problem when dealing with uniformly doped channel, which leads to the degradation of the device performance.

The various figures of merits such as transconductance, transconductance generation factor and intrinsic gain along with cut-off frequency, maximum frequency of oscillation and gain bandwidth product are investigated for symmetric and asymmetric drain extensions in the underlapped DG FETs.