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The source and drain contacts are taken from the top.
A second spacer is then performed to insulate the gate to the drain contacts (Fig. 2d).
The top view of CNTFET with the source and drain contacts is shown in Figure1.
Our individual metallic DWCNT devices have good source and drain contacts.
The source and drain contacts were rectangular: 100 μm wide and 50 μm long.
Source and drain contacts were highly doped to form good ohmic contacts.
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In T-CNTFET, the increase in the potential difference between the gate and the drain contact leads to strong band-bending near the drain contact [6].
There are no available incorporation issues of SiNWs with the source and drain contact electrodes.
It is difficult to control the number of SiNWs bridging the source and drain contact electrodes.
Devices with thicker substrate insulator and smaller source drain contact area give the highest frequency.
Computations are performed by keeping all the contacts at ground and applying a reverse bias to the (Drain) contact.
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