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The experimental and the theoretical drain characteristics in Figure 7 look structurally very similar.
(a) Experimental drain characteristics for a nano-transistor with L = 10 nm [4, 5].
Typical drain characteristics are plotted in Figure 5 for a low temperature (u = 0.01) and at room temperature (u = 0.1).
Figure has been adapted from CPCB (2006 07) and modified Table 2 Wastewater drain characteristics S. no.
The conversion of the experimental drain voltage V into the theoretical parameter v D is given by Figure 7 Drain characteristics in experiment and theory.
(b) Theoretical drain characteristics for l = 10 and u = 0.1 (see Fig. 5a) with the green dashed threshold characteristic at = -0.05.
Similar(52)
To match the experimental drain characteristic to the theoretical one we first convert the highest experimental value for V G into the corresponding theoretical one.
Simulated single-subband CNT drain characteristic (solid lines) versus 80-nm experimental data with high-potassium (K -doped source and drain doping (filled diamond) at VG = 0 to 1.0 V in 0.2-V steps.
Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the saturation region.
The drain-source current(Ids)–drain-source voltage Vds) characteristics showed pinch-off and saturation.
When using ohmic source and drain contacts, transistor characteristics are not observed.
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