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Such an extensive loss of drainage area led to significant modification of the fluvial system in both upstream and downstream zones on the capturing stream, and downstream on the beheaded system.
The downstream analysis of these two temporal data sets indicated that they occur across a range of river lengths, catchment areas, bank heights and angles and do not appear to be scale-dependent or spatially restricted to certain downstream zones.
In detail, the boron nitride crucible holding GaAs powders (~1 g, 99.9999 % purity) and the SiO2/Si substrates (50-nm-thick thermal oxide) with the thermally deposited Au film (2.5 nm in nominal thickness) are placed in the centers of the upstream and downstream zones of a two-zone tube furnace, respectively, serving as the solid source and the growth catalyst.
Because this zone occurs at the front end of the device, it creates new reaction intermediates by several low-energy, unimolecular reaction pathways such as hydrogen chloride elimination and carbon halogen bond rupture that react further in the downstream zones.
As the receptors of most WWTP final effluents, outfalls in streams and the nearby downstream zones act as collectors of all the substances that were not removed by the treatment process.
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It has already been reported that water salinity increases from the upstream to the downstream zone.
The Ga2O3 NWs were synthesized in a dual-zone horizontal tube furnace, where the upstream zone was used for evaporating the solid source and the downstream zone for the NW growth, as reported previously [15].
The CrCl3 · 6H2O powders were put in the upstream zone of the furnace, where the temperature ranged from 700°C to 800°C, while the silicon (001) substrates were put in the downstream zone with the same temperature range.
The metal sources were put in the upstream zone where the temperature was 610°C, while the silicon (100) substrates were put in the downstream zone, the temperature range of which was 750°C ~ 900°C.
A pre-cleaned glass substrate was placed outside (downstream zone) of the direct heating zone, and the temperature around the glass substrates was maintained at about 500 °C to prevent glass deformation.
The processed substrate was then placed in the middle of the downstream zone with a tilt angle of approximately 20° and thermally annealed at 800°C for 10 min in a hydrogen environment to obtain Au nanoclusters as the catalysts.
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