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Based on the results of the previous design study, the neutron counter was completely rebuilt, and various detector parameters for neutron coincidence counting (i.e., high-voltage plateau, efficiency profile, dead time, die-away time, gate length, doubles gate fraction, and stability) were experimentally determined.
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Results are also compared with conventional dual material double gate (DMDG) and gate stacked dual material double gate (GSDMDG) JLT devices.
Furthermore the presented ZnO FET device benefits from double gate advantages.
Charge plasma based doping-less dual material double gate (DL-DMDG) junctionless transistor (JLT) is proposed.
In this paper, we report a comparative study of different double gate architectures.
A double gate at the other side was wide open, but he couldn't see anything beyond it.
Rules are posted beside a double gate, with plastic bags and trash buckets on hand for depositing dog waste.
RF performance of 3D double gate junctionless transistor (JLT) is investigated considering thin high-k dielectrics and gate metals.
Using Monte Carlo simulation, device performance of double gate MOSFET with 25 nm-gate length is evaluated.
Double gate MOSFET has been regarded as the most promising candidate for future CMOS devices, for excellent short channel effects (SCEs) immunity and high current drivability due to double gate coupling.
In this paper a double gate graphene nanoribbon field effect transistor with electrically-activated source extension is proposed.
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