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In this study, the optical properties of silicon quantum dot as a function of particle size were calculated and investigated.
(d) Comparison of the integrated EL intensity for the WSe2 layer and for a quantum dot as a function of the applied current.
Figure 1 Low-lying energies for (a) one, (b) two, and (c) three electrons in the type-II quantum dot, as a function of the magnetic flux Φ.
Figure 4 The luminescence peaks from (a) exciton and (b) trion in the type-II semiconductor quantum dot, as a function of the magnetic flux Φ.
Figure 1 Characteristic (a) lengths and (b) energies for the confined particle in a GaAs/AlGaAs quantum dot as a function of the confinement frequency.
Figure 2 Low-lying energies for two electrons in the type-II quantum dot, as a function of the magnetic flux Φ. Solid and dash lines indicate spin-singlet and triplet, respectively.
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Asymmetric dots as a function of their geometry have been investigated using three-dimensional (3D) object oriented micromagnetic framework (OOMMF) code.
(a) Total elastic energy of wires and dots as a function of the Si content.
(c) Average biaxial strain for wires and dots as a function of the Si content.
(d) Total strain + surface energy for wires and dots as a function of volume.
The electronic, optical and magnetic properties of the graphene quantum dots as a function of size, shape, type of edge and carrier density are considered.
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