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Fig. 2 Electron concentration in Si conduction band vs donor concentration N d and the temperature.
One can see that the DXS signal's temperature dependence correlates with that for donor concentration.
A typical Nernstian pH-dependence of the flatband potential was observed despite of donor concentration differences.
Hydrogen increases the donor concentration while chloride ions have no such effect.
Furthermore, high intensities can be obtained by an increased donor concentration, increasing the absorbance of excitation light [29].
Increasing oxygen and chloride concentration in the electrolyte increase the donor concentration in the passive film on Type 403 SS.
Both flat-band potential and donor concentration were estimated from the space charge capacitance at high frequencies.
It is concluded from Mott Schottky plots that the studied material has n-type conductance; the donor concentration is estimated.
The flatband potential and donor concentration of the passive films were obtained from the corresponding Mott-Schottky plots.
For this purpose the distribution of donor concentration was measured over the anodic oxide film using the electrochemical impedance technique.
The donor concentration depends on the film thickness and amounts to approximately 3 × 1018 cm−3 in minimum.
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