Sentence examples for distribution of switching from inspiring English sources

Based on this law, a switching model capable of dealing with the non-uniform distribution of switching strain is developed.

The choice of the right statistical model to describe the distribution of switching parameters (forming, SET and RESET voltages) is a critical requirement for RRAM, as it is used to analyze the worst case scenarios of operation that have to be accounted for while designing the cross-bar array structures, so as to ensure a robust design of the circuit and reliable data storage unit.

(a) Distribution of switching voltages.

The results presented above can be understood from the distribution of switching trajectories.

The distribution of switching parameters, however, showed quite obvious differences between the two types of devices.

Figure 11 shows the Weibull distribution of switching voltages and resistance values of the Ru/Lu2O3/ITO ReRAM device.

(d) Examples of Lorentzian distributions of switching times extracted from the fits in c at different pulse amplitudes and (inset) from the MD simulations (Supplementary Fig. 2).

Fits obtained with this expression accurately reproduce the experimental data of ferroelectric switching as a function of time and voltage (black lines in Fig. 2c). Figure 2d displays several representative distributions of switching times and illustrates the main trends.

Figure 4 Distributions of switching voltages and HRS/LRS resistances.

Figure 5 Cell-to-cell distributions of switching voltages in CDT-fabricated Cu/SiO 2 -stacked (CDT sample) ReRAM.

The cell-to-cell distributions of switching voltages in the CDT samples are illustrated in Figure 5.