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Finally, applications of the measured displacement data for SHM are reviewed, including examples of structural modal property identification, structural model updating, damage detection, and cable force estimation.
The equations for the parameter estimation are derived by minimizing cost functions in the satisfaction of the eigenvalue equation, the mode shape orthogonality requirements for the dynamic system, and the satisfaction of the measured displacement data for the static systems.
Although GNSS sites (GEONET) are densely deployed with an average placement interval of ~20 30 km nationwide, it remains difficult to obtain high quality displacement data for small- to moderate-sized earthquakes, impeding detailed analysis of the source properties, such as fault modeling.
Although GPS sites (GEONET) are densely deployed with an average placement interval of ~20 30 km, it remains difficult to obtain high quality displacement data for small to moderate-sized earthquakes/volcanic activities, impeding detailed analysis of the source properties, such as fault modeling.
Although continuous GNSS observation sites (GEONET) are densely deployed in and around the fault zone with an average placement interval of approximately 20 km (Fig. 1), it remains difficult to obtain spatially detailed displacement data for moderate-sized earthquakes, impeding comprehensive analysis of the source properties, such as fault modeling.
Unwinding and streptavidin displacement data for these enzymes suggest that these residues form contacts with the translocating strand ahead of the motor core.
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Figure 2 Load-displacement data for depth-sensing indentation experiment.
Figure 4 Load-displacement data for GaN thin film obtained during nanoindentation with a Berkovich indenter showing "multiple pop-ins" (arrows) during loading.
The system is based on a piezoelectric driving tip containing four discrete piezo devices, allowing for the collection of load-displacement data for each individual cycle.
The model was calibrated using load-displacement data for (111 -Si, which we show to be representative for the Berkovich indentation response of silicon.
Figure 1 Load-displacement data for single-crystal Si(100) obtained during nanoindentation with a Berkovich indenter showing two "pop-in" events during loading and, one "pop-out" event during unloading.
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