Sentence examples for dislocations were present in from inspiring English sources

Exact(1)

Contrast analysis indicates that both 1/2<110] and 1/2<101] unit dislocations were present in γm phase, with the latter linked by highly curved non-conservative antiphase boundaries.

Similar(59)

Dense dislocations are present in the interfacial zone and the substrate near the coating/substrate interface.

At intermediate pre-strain levels (4 8%), a/2〈1 1〉-typepe dislocations are present in the Mo-alloy fibers and the pre-existing dislocations in the NiAl matrix seem to be swept toward the interphase boundary.

Tetrataenite Multiple sets of intersecting lamellae and abundant perfect dislocations are present in tetrataenite from subsample RB-QD04-0042-02 (Figure 4a).

What has been found so far is that dislocations are present in the load bearing structures of living plants, i.e. stems and branches, but that they may also be introduced during post-harvest plant biomass processing, especially as a result of compression stress (Nyholm et al. 2001; Ander et al. 2005; Terziev et al. 2005; Thygesen and Asgharipour 2008; Thygesen 2011).

By using the Mellin transform technique in conjunction with the image method, the two-dimensional full-field solutions of dissimilar isotropic composite annular wedges subjected to anti-plane concentrated forces and screw dislocations are presented in explicit forms.

By using the Fourier-transform technique, the two-dimensional full-field solutions of transversely isotropic functionally graded magnetoelectroelastic bimaterials subjected to generalized line forces and edge dislocations are presented in this study.

The Kaplan Meier survival from dislocation is presented in Table 1 and in Fig. 2.

Edge dislocations are present within the grains.

Numerical results of full-field stress distributions and image forces exerted on screw dislocations are presented and discussed in detail.

Electron-beam induced current analysis indicates that although the dislocation density in the homo-epilayer is generally low and on the order of ∼1 × 107 cmesoscopiccopic defects such as grain boundaries and "dislocation walls" are present in the epilayer and serve as strong recombination centers.

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