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On the other hand, the double stresses have maximum values at the dislocation line.
In bcc crystals, the mobility of dislocations strongly depends on temperature and dislocation line characters.
It is worth noting that there is a dislocation line parallel to the 21-AGNR axis, as highlighted by the green dash-dotted line.
Moreover, we highlight the key role played by the curvature of the dislocation line in mediating this mechanism.
The gradient and classical solutions coincide when the distances from the dislocation line and the interface exceed several atomic spacings.
The method is applied here to the calculation of dislocation line energies in NiAl using an embedded atom model.
Motion of screw dislocations in BCC materials at low temperature is believed to be related to the formation of mobile kinks on the dislocation line.
Our model for stored energy associated to a dislocation line configuration is based on the theory of discrete dislocations of Ariza and Ortiz.
The optimal relative orientation between the dislocation line of the input sine-Gaussian beam and the axial orientation of the cylindrical lens is specified.
A simple explanation is that sliding delocalizes the dislocation core within the interface, thereby creating a larger, more abrupt fluctuation in dislocation line energy during transmission.
Since the level set method does not discretize nor directly track individual dislocation line segments, it easily handles topological changes occurring in the microstructure.
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