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Dislocation density is measured using imaging cathodoluminescence.
A similar trend is observed for dislocation density.
Furthermore, the dislocation density and texture coefficient values investigated from every diffraction peak are displayed in Table S1†.
Kamiyama, S. et al. UV light-emitting diode fabricated on hetero-ELO-grown Al0.22Ga0.78N with low dislocation density.
In regions with higher solute (Ag) content, the high dislocation density present following rolling is stabilized, while in other volumes the dislocation density is decreased.
where M is the Taylor factor, α is a constant, G is the shear modulus, b is the burgers vector, and ρ is the dislocation density.
The dislocation density decreased in HAZ and WM after aging for 6000 h.
The resolved shear stress and the von Mises stress are used to predict the dislocation density.
The maskless ELO process had a significant influence on decreasing the dislocation density.
We find that a combined stored energy and dislocation density provide promising results.
Dislocation density function method is used to evaluate KI and KII.
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