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The direct gaps of equilibrium structures often become indirect under certain types of strain, depending on the material.
There are 3,606 edges between these nodes, of which some (the synaptic connections) are directed, while gap-junctions are undirected.
Sequence gaps were closed by directed sequencing of gap-spanning templates obtained by PCR amplification.
The other presumable interpretation is the quasi-direct gap emission.
The optical direct gap was 4.1 eV and the indirect energy gap was 2.45 eV.
It also represents that pristine TiO2 was a direct-gap semiconductor material.
The SO interaction for conduction electrons in direct-gap semiconductors is written as (1).
The direct-gap energy at this crossover position is approximately 0.47 eV.
However, other stacked nanoribbons are exclusively indirect- or direct-gap semiconductors.
In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting.
The Si-Ge nanostructures such as quantum wells (2D) and quantum dots (QDs) have aroused huge scientific interest [5 10], which could transfer the indirect bandgap into a direct-gap or quasi-direct-gap band.
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