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Etching, and wafer direct bonding are only two of the relevant areas of application.
M-TPA can be attached by using direct bonding with resin-reinforced glass ionomer cement.
We have studied direct bonding and mechanical thinning of pre-etched silicon wafers.
As an alternative, copper-to-copper direct bonding (CuDB) has been proposed.
These analyses help in developing models for direct bonding and splitting.
Perhaps the simplest fix is direct bonding, closing the space between the teeth with the application of a resin composite.
In this approach, nitrogen ion implantation, direct bonding and a two-step annealing process were integrated for Fe16N2 permanent magnet preparation.
Direct bonding was performed by a conventional method of furnace annealing in nitrogen atmosphere.
Ion implantation was utilized as a pre-treatment method for direct bonding of ceramics with copper.
Internal constraints are inherent to the molecular architecture, and generally result from direct bonding, electrostatic interactions, or steric effects.
Two likewise structured wafers are connected by means of silicon direct bonding and consequently form 120° double mirrors.
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