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Figure 4 Diode structure: Left: mesh.
The model includes process simulation and 2D drift diffusion simulation of the defined geometrical diode structure.
This model allows us to relate features in the optical spectrum to the diode structure.
The a-Si H film is deposited with a-Si Hp diode structure.
The quantum dots are embedded in a p-i-n diode structure.
To understand the ITO/TiO2/Si diode structure, we used scanning electron microscopy (SEM) and TEM to analyze the structure.
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Figure 3 C-V characteristics of the fabricated diode structures.
The samples studied in this work were unipolar 6H-SiC n+ − n− − n+ diode structures.
The mechanism of the oscillation is precisely modelled under various diode structures and current ranges.
Ultra-fast diode structures based on non-semiconductive materials employing tunneling mechanism have been investigated.
The diode structures selected in this way were used for investigations of the terahertz emission at liquid helium temperatures.
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