Sentence examples for diffusion of silicon from inspiring English sources

Step (iii) Diffusion of silicon vapor via gold nanoparticles.

To enhance the reliability, these thermistors were supported by a multi-layer structure beam formed by a diffusion of silicon layer, a silicon oxidation layer, and a silicon nitride layer.

Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier layer (15 atomic layer deposition (ALD) cycles, approximately 1.5 nm) plays an important role in suppressing the diffusion of silicon atoms from Si substrate into the La2O3 layer during the annealing process.

There appear to be at least two competing mechanisms in the Si-nc growth dynamics related to the growth of existing Si-ncs due to diffusion of silicon atoms in the film and the formation and subsequent growth of new Si-ncs at nucleation sites.

Such model calibration allowed determining the diffusion coefficients of silicon vacancies and interstitials at room temperature, the time required for the formation of all the complexes, the concentrations of complexes as a function of H concentration and the specific role of some complexes in generating strain.

A combination of complementary techniques has shown that the annealing above 700 °C of amorphous Si deposited on ZLG leads to the diffusion of the silicon over the surface.

The diffusion of excess silicon at high Tg produces Si-ncs in the SiO x films, i.e., the silicon particles diffuse to create silicon agglomerates around the nucleation sites when the SiO x is grown at high Tg. Figure 7 shows the PL response of SiO x films corresponding to different growth temperatures.

Most studies to date have employed isochronal annealing steps after deposition to induce diffusion of excess silicon to nucleation sites.

This indicates that Si-ncs form and begin to grow very rapidly through a transient diffusion of excess silicon.

This value is fairly consistent with the value of 0.63 × 10-15 cm2/s for Er in the SiO2 layer prepared by magnetron sputtering and annealed at 1,100°C for 1.5 h in N2[26] and about 2 orders of magnitude higher than the diffusion coefficient of silicon-rich silicon oxide (SRSO) of 1.2 × 10-17 cm2/s at 1,100°C [27].

To illustrate this, diffusion barriers made of silicon dioxide have also been grown and compared to SiNx.