Sentence examples for diffused silicon from inspiring English sources

Nano-apertures are made in boron diffused silicon film.

We have designed a planar diffused silicon diode on a n-channel pH sensitive ISFET sensor to act as a temperature sensor for on-chip temperature measurement and compensation.

Detectors used by experimental platform are diffused silicon pressure transmitter, Pt100 temperature sensor and a turbine flow meter.

The front and back metallization of the diffused silicon wafers was carried out using standard Ag paste (product no. 3349, Ferro Electronic Materials) and Al paste (product no. Fx53-038, FElectronicronic Materials) for screen-printed metallization technique followed by baking and co-firing at the temperature of 750 °C in a conveyor belt furnace (SeirraTherm, USA).

In this article, a novel rear structure using Ag nanoparticles to create surface plasmons to enhance light trapping is applied on the rear of planar high efficiency PERT (Passivated Emitter and Rear Totally Diffused) silicon wafer cells, targeting the spectrum range from 1000 nm to 1200 nm.

The out-diffused silicon can be dissolved into small Fe-Al particles, which are formed in an early stage of oxidation.

We report n-type passivated emitter rear totally diffused (PERT) silicon solar cells with local back contacts (LBC) formed by laser process.

Using life-cycle costing, we analyzed the current cost breakdown of these SHJ designs, and compared them to conventional diffused junction monocrystalline silicon modules.

In order to investigate the dependence of Al2O3 passivation quality on doping concentration, n-type silicon was diffused double-side with Al to be P+ emitters, and passivation quality of PEALD alumina on P+ surface is shown in Figure 5.

Finally, a 10-nm-thick SiO2 film and a 50-nm-thick ITO film were deposited subsequently by e-beam evaporator and thermally sputter on the surface of a bare diffused p-n junction silicon solar cell), and the MOS-structure solar cell was thus obtained (the reference cell, zero biasing).

The sensing element consists of a bossed KOH-etched silicon membrane with diffused piezoresistors.